High-energy ions' movement affected by silicon crystal periodicity

phys.org | 3/22/2018 | Staff
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The thinner the silicon crystal, the better. Indeed, thinner crystals provide better ways to manipulate the trajectories of very high-energy ions in particle accelerators. Further applications include materials analysis, semiconductor doping and beam transport in large particle accelerators. All of these rely on our understanding of how positively-charged high-energy particles move through crystals.

This process, called ion channelling, is the focus of a new paper by Mallikarjuna Motapothula and Mark Breese working at the National University of Singapore. In a paper published in EPJ B, the authors study how the crystal periodicity affects the motion of ions whose energy belongs to a 1 to 2 MeV range, as they are transmitted through very thin crystals on the order of a few hundred nanometres, and how it impacts their angular distribution.

Crystals - Occurs - Transverse - Energy - Ions

Channelling in crystals occurs when the transverse energy of incident ions is less than the maximum potential energy associated with an atom row or a crystal plane. The authors study the trajectories of high-energy ions, which pass through several...
(Excerpt) Read more at: phys.org
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