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Researchers from the Moscow Institute of Physics and Technology have managed to grow atomically thin films of molybdenum disulfide spanning up to several tens of centimeters square. It was demonstrated that the material's structure can be modified by varying the synthesis temperature. The films, which are important to electronics and optoelectronics, were obtained at 900-1,000° Celsius. The findings were published in the journal ACS Applied Nano Materials.
Two-dimensional materials are attracting considerable interest due to their unique properties stemming from their structure and quantum mechanical restrictions. The family of 2-D materials includes metals, semimetals, semiconductors, and insulators. Graphene, which is perhaps the most famous 2-D material, is a monolayer of carbon atoms. It has the highest charge-carrier mobility recorded to date. However, graphene has no band gap under standard conditions, and that limits its applications.
Graphene - Width - Bandgap - Molybdenum - Disulfide
Unlike graphene, the optimal width of the bandgap in molybdenum disulfide (MoS2) makes it suitable for use in electronic devices. Each MoS2 layer has a sandwich structure, with a layer of molybdenum squeezed between two layers of sulfur atoms. Two-dimensional van der Waals heterostructures, which combine different 2-D materials, show great promise as well. In fact, they are already widely used in energy-related applications and catalysis. Wafer-scale (large-area) synthesis of 2-D molybdenum disulfide shows the potential for breakthrough advances in the creation of transparent and flexible electronic devices, optical communication for next-generation computers, as well as in other fields of electronics and optoelectronics.
"The method we came up with to synthesize MoS2 involves two steps. First, a film of MoO3 is grown using the atomic layer deposition technique, which offers precise atomic layer thickness and allows conformal coating of all surfaces. And MoO3 can easily be obtained on wafers...
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