Accelerating development of STT-MRAM

phys.org | 8/5/2019 | Staff
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Researchers at the Center for Innovative Integrated Electronic Systems (CIES) at Tohoku University have successfully observed microscopic chemical bonding states in ultrathin MgO—an important determinant in STT-MRAM performance. The observation was carried out via an angle-resolved hard X-ray photoelectron spectroscopy (AR-HAXPES) in collaboration with Japan Synchrotron Radiation Research Institute (JASRI) at its Spring-8 Synchrotron Radiation facility.

STT-MRAM, a form of non-volatile memory, has been intensively researched and developed because of its high-performance and low power consumption. STT-MRAM contains magnetic tunnel junctions (MTJ) as an integrated memory element. Ultrathin MgO film is used as a tunneling barrier for MTJ, thus being a dominant determinant in STT-MRAM performance. It is, therefore, important to understand the microscopic characteristics of MgO and in particular, the chemical bonding state.

Researchers - Tohoku - University - Lead - Prof

Researchers at Tohoku University lead by Prof. Tetsuo Endoh, director of CIES and Dr. Testuya Nakamura, group leader of JASRI have successfully observed the chemical bonding state of the ultrathin MgO in entire MgO layer by means of AR-HAXPES at SPring-8, the world's largest...
(Excerpt) Read more at: phys.org
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