New interaction between thin film magnets discovered

phys.org | 4/26/2019 | Staff
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People stream videos, download audiobooks to mobile devices, and store huge numbers of photos on their devices. The need for storage capacity is growing rapidly, and researchers are working to develop new data storage options. One possibility is the racetrack memory device in which data is stored in nanowires in the form of oppositely magnetized domains. The results of this research have recently been published in the scientific journal Nature Materials.

A research team from Johannes Gutenberg University Mainz (JGU) in Germany, together with colleagues from Eindhoven University of Technology in the Netherlands, Daegu Gyeongbuk Institute of Science and Technology and Sogang University in South Korea, has now made a discovery that could significantly improve these racetrack memory devices. Instead of using individual domains, in the future, it could be possible to store the information in three-dimensional spin structures, making the memory faster and more robust, and providing higher data capacity.

Hitherto - Interaction - Dr - Kyujoon - Lee

"We were able to demonstrate a hitherto undiscovered interaction," said Dr. Kyujoon Lee of Mainz University. "It occurs between two thin magnetic layers separated by a non-magnetic layer." Usually, spins align either parallel or antiparallel to each other. This would also be expected for such...
(Excerpt) Read more at: phys.org
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