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Scientists from the Higher School of Economics, Manchester University, the Ulsan National Institute of Science & Technology and the Korea Institute of Science and Technology have developed a novel technology that combines the fabrication procedures of planar and vertical heterostructures in order to assemble graphene-based single-electron transistors of excellent quality.
This technology could considerably expand the scope of research on two-dimensional materials by introducing a broader platform for the investigation of various devices and physical phenomena. The manuscript is published as an article in Nature Communications.
Study - High-quality - Graphene - Dots - GQDs
In the study, it was demonstrated that high-quality graphene quantum dots (GQDs), regardless of whether they were ordered or randomly distributed, could be successfully synthesised in a matrix of monolayer hexagonal boron nitride (hBN). Here, the growth of GQDs within the layer of hBN was shown to be supported catalytically by the platinum (Pt) nanoparticles distributed in between the hBN and supporting oxidised silicon (SiO2) wafer, when the whole structure was treated by the heat in the methane gas (CH4). Due to the same lattice structure (hexagonal) and small lattice mismatch (~1.5 percent) of graphene...
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