Multibit optoelectronic memory | 9/21/2018 | Staff
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NUS scientists have developed multibit optoelectronic memory using a heterostructure made of two-dimensional (2-D) materials for next generation devices.

Optoelectronic memories are devices which can store photon-generated charge carriers when exposed to light. The stored charges can be accessed later for information retrieval. These devices can be used in image capture and spectrum analysis systems. 2-D atomically layered materials are promising candidates for the development of next generation optoelectronic memories to meet emerging requirements for device miniaturisation and structural flexibility. However, optoelectronic memories fabricated using 2-D materials have been reported to suffer from poor data storage capability with the highest reported figure at about eight distinct storage states.

Team - Lead - Prof - Chen - Wei

A team lead by Prof Chen Wei from both the Department of Chemistry and the Department of Physics, NUS has developed a multibit, non-volatile optoelectronic memory device that is able to store up to 130 distinct states by using a tungsten diselenide/boron nitride (WSe2/BN) heterostructure. The heterostructure, made of 2-D materials, comprises a monolayer of WSe2 on a 20-layer BN. The programming (store data) and erasing (delete data) functions are controlled by adjusting the applied polarity to the device. A negative polarity is applied during the programming function and it causes the photon-generated electrons from the midgap donor-like states of the BN material to transfer into the WSe2 material. This leaves behind localised...
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